The MOSFET series of tutorials are updated with a user-defined mesh that is coarser, for faster computations. Tutorial Model Improvements MOSFET Series of Tutorials
The MOSFET tutorials, which use the band-gap narrowing feature, are affected.Fixed the formulation for band-gap narrowing (FVM and FEM), position-dependent band gap (FVM), and carrier diffusion due to temperature gradient (FVM).Improved consistency of continuation parameter scaling among all doping profile types.Improved high field mobility model behavior at low currents.Automatic setup of the constraint value for the electric potential at a Metal Contact with user-defined Schottky barrier height.Improved finite volume formulation for incomplete ionization, spatially varying electron affinity and band gap, and consistency with the thermal equilibrium condition.The result for a large number of particles compares well with the Thomas-Fermi approximation as expected.Ĭ-V curves for the low- and high-frequency cases.Īpplication Library path: Semiconductor_Module/Device_Building_Blocks/moscap_1d_small_signal Enhancements and Bug Fixes Instead, a stationary study is used with a global equation enforcing the normalization of the wave function to solve for the ground-state solution. The eigenvalue study is not suitable for solving this kind of nonlinear eigenvalue problem. The equation is essentially a nonlinear single-particle Schrödinger equation, with a potential energy contribution proportional to the local particle density. This tutorial model solves the Gross-Pitaevskii equation for the ground state of a Bose-Einstein condensate in a harmonic trap, using the Schrödinger Equation physics interface in the Semiconductor Module.
New Tutorial Model: Gross-Pitaevskii Equation for Bose-Einstein Condensation This helps the study of various scattering phenomena. In addition to the Open Boundary condition for outgoing waves, the Perfectly Matched Layer (PML) functionality is added to the Schrödinger Equation interface to absorb outgoing waves for stationary studies. PML for the Schrödinger Equation Interface The expanded functionality allows more flexibility in studying systems with complex trap properties, in particular its dynamics. The energy discretization, the energy range, and number of mesh points along the energy axis can also be tailored individually for each continuous energy level subnode. The functionality of the Trapping feature is expanded so that users can enter the initial trap occupancy and the degeneracy factor individually for each discrete or continuous energy level subnode. Screenshot ansehen Trapping Functionality
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